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Width: 7.1 mm
Height: 0.74 mm
Length: 9.15 mm
Fall Time: 33 ns
Rise Time: 87 ns
Technology: Si
Unit Weight: 176.520 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 200 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 125 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 18 ns
Typical Turn-Off Delay Time: 80 ns
Id - Continuous Drain Current: 160 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 1.8 mOhms
Vds - Drain-Source Breakdown Voltage: 75 V
Vgs th - Gate-Source Threshold Voltage: 4 V
