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Width: 3 mm
Height: 1.11 mm
Length: 3 mm
Fall Time: 5.3 ns, 9.3 ns
Rise Time: 10 ns, 12 ns
Technology: Si
Unit Weight: 191.170 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 7.8 nC, 7.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.25 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 4.7 ns, 9.7 ns
Typical Turn-Off Delay Time: 12 ns, 19 ns
Id - Continuous Drain Current: 2.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.9 S, 0.92 S
Rds On - Drain-Source Resistance: 200 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 700 mV
