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Type: Power MOSFET
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 1.25W
Operating temperature: -55 to 150C
Drain to Source voltage: 20V
Continuous drain current: 2.4A
Current - Drain (Id) (25°C): 2.4A
Field-effect transistor type: 2N-Channel(Dual)
Gate Charge - (when applying Vgs): 8nC@4.5V
Drain to Source on-state resistance: 135mOhm
On Voltage - (Vgs when Id is applied): 700mV@250uA
On Resistance - (Rds when Id,Vgs is applied): 135mOhm@1.7A|4.5V
Input Capacitance - (Ciss when Vds is applied): 260pF@15V
