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Type: Power MOSFET
FET Feature: Standard
Mounting Type: Surface Mount
Power-Maximum: 1.4W
Operating temperature: -55 to 150C
Drain to Source voltage: 30V
Continuous drain current: 4A/3A
Current - Drain (Id) (25°C): 4|3A
Field-effect transistor type: N and P-Channel
Gate Charge - (when applying Vgs): 25nC@4.5V
Drain to Source on-state resistance: 50mOhm/100mOhm
On Voltage - (Vgs when Id is applied): 1V@250uA
On Resistance - (Rds when Id,Vgs is applied): 50mOhm@2.4A|10V
Input Capacitance - (Ciss when Vds is applied): 520pF@15V
