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Type: Power MOSFET
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 2W
Operating temperature: -55 to 150C
Drain to Source voltage: 20V
Continuous drain current: 5.2A/4.3A
Current - Drain (Id) (25°C): 5.2|4.3A
Field-effect transistor type: N and P-Channel
Gate Charge - (when applying Vgs): 20nC@4.5V
Drain to Source on-state resistance: 50mOhm/90mOhm
On Voltage - (Vgs when Id is applied): 700mV@250uA
On Resistance - (Rds when Id,Vgs is applied): 50mOhm@2.6A|4.5V
Input Capacitance - (Ciss when Vds is applied): 660pF@15V
