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Type: Power MOSFET
Vgs(th): 2.25 V
Vgs (Max): 20V
Gate Charge (Qg): 29nC
Power consumption: 2.1|42W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 40V
Continuous drain current: 12.7A/55A
Input Capacitance (Ciss): 2560pF
Operating temperature range: -40 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 8.3mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
