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Type: Power MOSFET
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 960mW
Drain to Source voltage: 20V
Continuous drain current: 2.9A
Current - Drain (Id) (25°C): 2.9A
Field-effect transistor type: 2P-Channel(Dual)
Gate Charge - (when applying Vgs): 9.6nC@4.5V
Drain to Source on-state resistance: 90mOhm
On Voltage - (Vgs when Id is applied): 1.2V@250uA
On Resistance - (Rds when Id,Vgs is applied): 90mOhm@2.9A|4.5V
Input Capacitance - (Ciss when Vds is applied): 650pF@16V
