Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 3.8 V
Vgs (Max): 20V
Gate Charge (Qg): 555nC
Power consumption: 556W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 100V
Continuous drain current: 209A
Input Capacitance (Ciss): 25000pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 1.28mOhm
Drive Voltage (Max Rds On, Min Rds On): 6|10V
