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Width: 4.4 mm
Height: 15.65 mm
Length: 10 mm
Fall Time: 6 nS
Rise Time: 11 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 118 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 277.8 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-Off Delay Time: 68 nS
Id - Continuous Drain Current: 31.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 110 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 3 V
