Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 10.1 mm
Height: 2.4 mm
Length: 10.58 mm
Fall Time: 61 ns
Rise Time: 22 ns
Technology: Si
Unit Weight: 772.190 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 221 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 429 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 50 ns
Typical Turn-Off Delay Time: 68 ns
Id - Continuous Drain Current: 300 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 770 uOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2 V
