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Width: 5.15 mm
Height: 1.27 mm
Length: 5.9 mm
Fall Time: 20 ns, 20 ns
Rise Time: 3 ns, 3 ns
Technology: Si
Unit Weight: 96.880 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 39 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 54 W
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Typical Turn-On Delay Time: 7 ns, 7 ns
Typical Turn-Off Delay Time: 40 ns, 40 ns
Id - Continuous Drain Current: 20 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 7.2 mOhms, 7.2 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
