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Infineon IPD046N08N5ATMA1 DIFFERENTIATED MOSFETS

Name: Infineon IPD046N08N5ATMA1 DIFFERENTIATED MOSFETS
Brand: Infineon

ModelIPD046N08N5ATMA1

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Channel Type: N Channel

Power Dissipation: 125

Transistor Mounting: Surface Mount

Transistor Case Style: TO-252 (DPAK)

Drain Source Voltage Vds: 80

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 90

Drain Source On State Resistance: 4.6

Gate Source Threshold Voltage Max: 3.8

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