Infineon IPB80R290C3AATMA2 MOSFETs AUTOMOTIVE_COOLMOS

Fall Time: 12 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 324 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 88 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 227 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 72 ns

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 670 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 3 V