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Infineon IPB80P04P4L08ATMA2 OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 80A 3-Pin TO-263 Surface M

Name: Infineon IPB80P04P4L08ATMA2 OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 80A 3-Pin TO-263 Surface M
Brand: Infineon

ModelIPB80P04P4L08ATMA2

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Channel Type: P Channel

Qualification: AEC-Q101

Power Dissipation: 75

Transistor Mounting: Surface Mount

Transistor Case Style: TO-263

Drain Source Voltage Vds: 40

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 80

Drain Source On State Resistance: 7.9

Gate Source Threshold Voltage Max: 2.2

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