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Width: 9.25 mm
Height: 4.4 mm
Length: 10 mm
Fall Time: 5.8 ns
Rise Time: 7.6 ns
Technology: Si
Unit Weight: 324 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Mounting Style: SMD/SMT
Qg - Gate Charge: 44 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 176 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 12.5 ns
Typical Turn-Off Delay Time: 40 ns
Id - Continuous Drain Current: 23.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 160 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4 V
