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Vgs(th): 2.2 V
Vgs (Max): 20V
Gate Charge (Qg): 79nC
Power consumption: 167W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 60V
Continuous drain current: 90A
Input Capacitance (Ciss): 13000pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 3.4mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
