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Infineon IPB025N10N3GATMA1 Power MOSFET, N Channel, 100 V, 180 A, 0.002 ohm, TO-263 (D2PAK), Surface Mount

Name: Infineon IPB025N10N3GATMA1 Power MOSFET, N Channel, 100 V, 180 A, 0.002 ohm, TO-263 (D2PAK), Surface Mount
Brand: Infineon

ModelIPB025N10N3GATMA1

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Channel Type: N Channel

Power Dissipation: 300

Transistor Mounting: Surface Mount

Transistor Case Style: TO-263

Drain Source Voltage Vds: 100

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 180

Drain Source On State Resistance: 2.5

Gate Source Threshold Voltage Max: 3.5

Datasheet