Fall Time: 9 ns
Rise Time: 9 ns
Technology: Si
Unit Weight: 2 g
Mounting Style: Through Hole
Qg - Gate Charge: 18 nC
Number of Channels: 1 Channel
Pd - Power Dissipation: 24 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 17 ns
Typical Turn-Off Delay Time: 60 ns
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 499 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V