Infineon IPAW60R280P7SE8228XKSA1 MOSFETs CONSUMER

Fall Time: 9 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 2 g

Mounting Style: Through Hole

Qg - Gate Charge: 18 nC

Number of Channels: 1 Channel

Pd - Power Dissipation: 24 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 499 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V