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Fall Time: 8.4 ns
Rise Time: 4.2 ns
Technology: SiC
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 63 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 189 W
Vgs - Gate-Source Voltage: - 5 V, + 23 V
Typical Turn-On Delay Time: 21.4 ns
Typical Turn-Off Delay Time: 21.6 ns
Id - Continuous Drain Current: 59 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 34 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 5.7 V
