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Fall Time: 19.3 ns
Rise Time: 1.7 ns
Technology: SiC
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 5.3 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 60 W
Vgs - Gate-Source Voltage: - 7 V, + 23 V
Typical Turn-On Delay Time: 4.8 ns
Typical Turn-Off Delay Time: 10.8 ns
Id - Continuous Drain Current: 4.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1 S
Rds On - Drain-Source Resistance: 350 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 5.7 V
