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Infineon IMYH200R100M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 26 A, 2 kV, 131 Milliohms, TO-247 Plus, 4 Pins

Name: Infineon IMYH200R100M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 26 A, 2 kV, 131 Milliohms, TO-247 Plus, 4 Pins
Brand: Infineon

ModelIMYH200R100M1HXKSA1

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No. of Pins: 4

Channel Type: N Channel

Power Dissipation: 217 W

RDS(ON) Test Voltage: 18 V

Transistor Case Style: TO-247 Plus

Drain Source Voltage Vds: 2 kV

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 26 A

Mosfet Module Configuration: Single

Drain Source On State Resistance: 131 mOhm

Gate Source Threshold Voltage Max: 5.5 V

Datasheet