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Fall Time: 23 ns
Rise Time: 12 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 11.7 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 111 W
Vgs - Gate-Source Voltage: - 10 V, + 20 V
Typical Turn-On Delay Time: 21 ns
Typical Turn-Off Delay Time: 26 ns
Id - Continuous Drain Current: 10 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.9 S
Rds On - Drain-Source Resistance: 390 mOhms
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 5.7 V
