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Fall Time: 24 ns
Rise Time: 20 ns
Technology: SiC
Unit Weight: 1.600 g
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 11 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 107 W
Vgs - Gate-Source Voltage: - 10 V, + 20 V
Typical Turn-On Delay Time: 27 ns
Typical Turn-Off Delay Time: 32 ns
Id - Continuous Drain Current: 9.8 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.9 S
Rds On - Drain-Source Resistance: 450 mOhms
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 4.5 V
