Infineon IKW50N65ET7XKSA1 IGBT Transistors 650 V, 50 A IGBT with anti-parallel diode in TO-247 package
ManufacturerInfineon(View more products from this manufacturer)
ModelIKW50N65ET7XKSA1
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 273 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.35 V
Continuous Collector Current at 25 C: 80 A
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