Infineon IKW40N65RH5XKSA1 IGBT Transistors 650 V, 40 A IGBT Discrete with Silicon Carbide Schottky diode
ManufacturerInfineon(View more products from this manufacturer)
ModelIKW40N65RH5XKSA1
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 250 W
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.65 V
Continuous Collector Current at 25 C: 74 A
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts