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Infineon IFF600B12ME4S8PB11BOSA1 IGBT Silicon Modules 1200 V, 600 A dual IGBT module

Name: Infineon IFF600B12ME4S8PB11BOSA1 IGBT Silicon Modules 1200 V, 600 A dual IGBT module
Brand: Infineon

ModelIFF600B12ME4S8PB11BOSA1

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Technology: Si

Mounting Style: Screw Mount

Pd - Power Dissipation: 20 mW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 600 A