Infineon GS66506T-TR GaN FETs 650V, 22.5A, GaN E-mode, GaNPX package, Top-side cooled
Manufacturer: Infineon Model: GS66506T-TR - Contact
Technology: GaN
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: E-Mode
Qg - Gate Charge: 4.5 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 10 V, + 7 V
Maximum Operating Frequency: > 10 MHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 22.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 90 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 2.6 V
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment