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Width: 140 mm
Height: 38 mm
Length: 190 mm
Technology: Si
Unit Weight: 1 g
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 2.4 MW
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 3.3 kV
Collector-Emitter Saturation Voltage: 2.4 V
Continuous Collector Current at 25 C: 1.5 kA
