Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

Infineon FP50R12N2T7B11BPSA1 IGBT Silicon Modules LOW POWER ECONO

Name: Infineon FP50R12N2T7B11BPSA1 IGBT Silicon Modules LOW POWER ECONO
Brand: Infineon

ModelFP50R12N2T7B11BPSA1

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 50 A