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Infineon FP50R07N2E4BPSA1 IGBT Silicon Modules 650 V, 50 A PIM three phase input rectifier IGBT module

Name: Infineon FP50R07N2E4BPSA1 IGBT Silicon Modules 650 V, 50 A PIM three phase input rectifier IGBT module
Brand: Infineon

ModelFP50R07N2E4BPSA1

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Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 70 A