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Infineon FF750R17ME7DB11BPSA1 IGBT Silicon Modules 1700 V, 750 A dual IGBT module

Name: Infineon FF750R17ME7DB11BPSA1 IGBT Silicon Modules 1700 V, 750 A dual IGBT module
Brand: Infineon

ModelFF750R17ME7DB11BPSA1

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Technology: Si

Configuration: Dual

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 750 A