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Infineon FF650R17IE4PBOSA1 IGBT Module, Dual [Half Bridge], 650 A, 2 V, 150 °C

Name: Infineon FF650R17IE4PBOSA1 IGBT Module, Dual [Half Bridge], 650 A, 2 V, 150 °C
Brand: Infineon

ModelFF650R17IE4PBOSA1

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IGBT Technology: IGBT 4 [Trench

IGBT Termination: Stud

IGBT Configuration: Dual

Transistor Mounting: Screw Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 650

Collector Emitter Voltage Max: 1.7

Collector Emitter Saturation Voltage: 2

Datasheet