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Infineon FF600R12ME4A_B11 IGBT Silicon Modules 1200 V, 600 A dual automotive qualified IGBT module

Name: Infineon FF600R12ME4A_B11 IGBT Silicon Modules 1200 V, 600 A dual automotive qualified IGBT module
Brand: Infineon

ModelFF600R12ME4A_B11

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Technology: Si

Unit Weight: 345 g

Configuration: Dual

Pd - Power Dissipation: 3.35 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 950 A