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Infineon F4150R17ME4B11BPSA2 IGBT Silicon Modules 1700 V, 150 A fourpack IGBT module

Name: Infineon F4150R17ME4B11BPSA2 IGBT Silicon Modules 1700 V, 150 A fourpack IGBT module
Brand: Infineon

ModelF4150R17ME4B11BPSA2

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Technology: Si

Configuration: 4-Pack

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 230 A