Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

Infineon F3L200R12W2H3_B11 IGBT Silicon Modules 1200 V, 200 A 3-level IGBT module

Name: Infineon F3L200R12W2H3_B11 IGBT Silicon Modules 1200 V, 200 A 3-level IGBT module
Brand: Infineon

ModelF3L200R12W2H3_B11

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Technology: Si

Unit Weight: 36 g

Configuration: 3-Phase Inverter

Pd - Power Dissipation: 600 W

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 200 A