Infineon DF200R12W1H3FB11BOMA1 SiC IGBT Modules 1200 V, 30 A, IGBT Module in EasyPACK
ManufacturerInfineon(View more products from this manufacturer)
ModelDF200R12W1H3FB11BOMA1
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Technology: Si
Unit Weight: 24 g
Configuration: 3-Phase Inverter
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.3 V
Continuous Collector Current at 25 C: 30 A
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