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Width: 3.3 mm
Height: 1.1 mm
Length: 3.3 mm
Technology: Si
Unit Weight: 38.760 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 11.6 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 62.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 5 ns
Typical Turn-Off Delay Time: 10 ns
Id - Continuous Drain Current: 15.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 8 S
Rds On - Drain-Source Resistance: 77 mOhms
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs th - Gate-Source Threshold Voltage: 2 V
