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Width: 3.3 mm
Height: 1.1 mm
Length: 3.3 mm
Fall Time: 1.4 ns, 4.7 ns
Rise Time: 2 ns, 3.7 ns
Technology: Si
Unit Weight: 112.430 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 700 pC, 590 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 4.9 ns, 7.4 ns
Typical Turn-Off Delay Time: 12.2 ns, 11.3 ns
Id - Continuous Drain Current: 5.1 A, 3.2 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 5.5 S, 3.4 S
Rds On - Drain-Source Resistance: 41 mOhms, 97 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV, 1.4 V
