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Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Fall Time: 20.5 ns
Rise Time: 16.2 ns
Technology: Si
Unit Weight: 6 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 1.5 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 300 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 6.7 ns
Typical Turn-Off Delay Time: 8.6 ns
Id - Continuous Drain Current: 150 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 80 mS
Rds On - Drain-Source Resistance: 4.6 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2 V
