Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 2 V
Vgs (Max): 20V
Gate Charge (Qg): 2.26nC
Power consumption: 360mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 55V
Continuous drain current: 540mA
Input Capacitance (Ciss): 75pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 650mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
