Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Fall Time: 1.2 ns, 3.2 ns
Rise Time: 3.6 ns, 5 ns
Technology: Si
Unit Weight: 7.500 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 340 pC, 400 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 3.8 ns, 3.8 ns
Typical Turn-Off Delay Time: 4.5 ns, 5.1 ns
Id - Continuous Drain Current: 950 mA, 530 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2 S, 700 mS
Rds On - Drain-Source Resistance: 266 mOhms, 745 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 700 mV, 1.2 V
