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Type: Power MOSFET
Vgs(th): 3.5 V
Vgs (Max): 20V
Gate Charge (Qg): 74nC
Power consumption: 2.8|78W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 100V
Continuous drain current: 9A/83A
Input Capacitance (Ciss): 5500pF
Operating temperature range: -40 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 5.6mOhm
Drive Voltage (Max Rds On, Min Rds On): 6|10V
