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Width: 1.3 mm
Height: 1 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 8 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 580 mW
DC Current Gain hFE Max: 70 at 30 mA at 8 V
Emitter- Base Voltage VEBO: 2 V
Collector- Base Voltage VCBO: 20 V
Maximum DC Collector Current: 80 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 12 V
