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Technology: SiGe
Unit Weight: 1.800 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 85 GHz
Pd - Power Dissipation: 75 mW
Emitter- Base Voltage VEBO: 2.6 V
Continuous Collector Current: 35 mA
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 2.25 V
