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Infineon BFP840ESDBOARDTOBO1 RF Bipolar Transistors The BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.

ModelBFP840ESDBOARDTOBO1
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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 80 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 75 mW

Continuous Collector Current: 35 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 2.25 V

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