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Infineon BFP 720FESD H6327 RF Silicon Germanium RF BIP TRANSISTORS | EMIN.CO.TH

RF Transistors
Infineon BFP 720FESD H6327 RF Silicon Germanium RF BIP TRANSISTORS

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Infineon BFP 720FESD H6327 RF Silicon Germanium RF BIP TRANSISTORS

ManufacturerInfineon(View more products from this manufacturer)

ModelBFP 720FESD H6327

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Technology: SiGe

Unit Weight: 1.870 mg

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 43 GHz

Pd - Power Dissipation: 100 mW

DC Current Gain hFE Max: 400

Collector- Base Voltage VCBO: 4.9 V

Continuous Collector Current: 30 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 4.2 V

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