Infineon BF 888 H6327 RF Bipolar Power RF BIP TRANSISTOR
ManufacturerInfineon(View more products from this manufacturer)
ModelBF 888 H6327
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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar Power
Transistor Polarity: NPN
Pd - Power Dissipation: 160 mW
Emitter- Base Voltage VEBO: 13 V
Continuous Collector Current: 30 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 250
Collector- Emitter Voltage VCEO Max: 4 V
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