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Technology: Si
Unit Weight: 6 mg
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 250 mW
Gain Bandwidth Product fT: 250 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 650 mV
