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Width: 2.38 mm
Height: 6.22 mm
Length: 6.73 mm
Fall Time: 23 ns
Rise Time: 32 ns
Technology: Si
Unit Weight: 340 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 66 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 99 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 31 ns
Id - Continuous Drain Current: 100 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 283 S
Rds On - Drain-Source Resistance: 3.1 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 3.9 V
