Infineon AIKBE50N65RF5ATMA1 IGBT Transistors SIC_DISCRETE
ManufacturerInfineon(View more products from this manufacturer)
ModelAIKBE50N65RF5ATMA1
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Technology: SiC
Mounting Style: SMD/SMT
Pd - Power Dissipation: 326 W
Maximum Gate Emitter Voltage: 4.8 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 50 A
Collector-Emitter Saturation Voltage: 2.03 V
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